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HFA180NH40PbF
Vishay High Power Products
HEXFRED ?
Ultrafast Soft Recovery Diode, 180 A
FEATURES
? Very low Q rr and t rr
Lug terminal
? Lead (Pb)-free
anode
? Designed and qualified for industrial level
RoHS
COMPLIANT
BENEFITS
? Reduced RFI and EMI
Base
? Reduced snubbing
HALF-PAK (D-67)
PRODUCT SUMMARY
I F(AV)
V R
I F(DC) at T C
cathode
180 A
400 V
200 A at 100 °C
DESCRIPTION
HEXFRED ? diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Non-repetitive avalanche energy
Maximum power dissipation
Operating junction and storage
temperature range
SYMBOL
V R
I F
I FSM
E AS
P D
T J , T Stg
TEST CONDITIONS
T C = 25 °C
T C = 100 °C
Limited by junction temperature
L = 100 μH, duty cycle limited by maximum T J
T C = 25 °C
T C = 100 °C
MAX.
400
395
200
1200
1.4
657
263
- 55 to + 150
UNITS
V
A
mJ
W
°C
ELECTRICAL SPECIFICATIONS (T J = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V BR
I R = 100 μA
I F = 180 A
TEST CONDITIONS
MIN.
400
-
TYP.
-
1.08
MAX.
-
1.46
UNITS
V
Maximum forward voltage
V FM
I F = 360 A
See fig. 1
-
1.22
1.8
I F = 180 A, T J = 125 °C
-
0.99
1.34
Maximum reverse
leakage current
Junction capacitance
I RM
C T
T J = 125 °C, V R = 400 V
V R = 200 V
See fig. 2
See fig. 3
-
-
-
370
4
500
mA
pF
Series inductance
L S
From top of terminal hole to mounting plane
-
6.0
-
nH
Document Number: 94061
Revision: 01-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
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